| Zakładka z wyszukiwarką danych komponentów |
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W2TG0-13A-R2/UL sprzedawcę |
| sprzedawcę | Numer części | Producent | Szczegółowy opis | Price | Qty. BuyNow | |
![]() ComSIT USA | NSR1020MW2T1G | onsemi | 20V SOD-323 Schottky Barrier Diode Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon RoHS : Compliant | 4,205 | ||
| FP35R12W2T4 | Infineon Technologies AG | IGBT-MODULE Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7 | |||
![]() Interstate Connecting Components | LPTW2TP-124 | Trompeter | TWINAX LOOPING PLUG 124 OHM WITH TEST POINT MONITOR |
| 0 | |
| SP24W2T | Amphenol Sine Systems | SIZE 20 PIN CONTACT, STAMPED, | 0 | |||
| LPTW2TP-78 | Trompeter | Twinax Looping Plug 78 Ohm with Test Point monitor |
| 0 | ||
| SS28W2T | Amphenol Sine Systems | SIZE 20 SOCKET CONTACT, STAMPE | 0 | |||
| SS24W2T | Amphenol Sine Systems | SIZE 20 SOCKET CONTACT, STAMPE | 0 | |||
| SS20W2T | Amphenol Sine Systems | SOCKET CONTACT, STAMPED, TIN P |
| 0 | ||
| SP28W2T | Amphenol Sine Systems | SIZE 20 PIN CONTACT, STAMPED, | 0 | |||
| SP20W2T | Amphenol Sine Systems | PIN CONTACT, STAMPED, SIZE 20, |
| 0 | ||
![]() PEI Genesis | SP24W2T | Amphenol Sine Systems |
| 0 | ||
| SS28W2T | Amphenol Sine Systems |
| 0 | |||
| SS24W2T | Amphenol Sine Systems |
| 0 | |||
| SS20W2T | Amphenol Sine Systems |
| 0 | |||
| SP28W2T | Amphenol Sine Systems |
| 0 | |||
| SP20W2T | Amphenol Sine Systems |
| 0 | |||
![]() PUI | 9W2TJ48P0H001 | Sanyo-Denki Co Ltd | RoHS : Compliant |
| 40 | |
| 9W2TJ24P0H001 | Sanyo-Denki Co Ltd | RoHS : Compliant |
| 24 | ||
| 9W2TN48P1H001 | Sanyo-Denki Co Ltd | RoHS : Compliant |
| 12 | ||
![]() Rutronik | FP35R12W2T4PBPSA1 | Infineon Technologies AG | 3PH-PIM 1200V 35A TIM EasyPIM RoHS : Compliant |
| 468 | |
| FS75R12W2T4B11BOMA1 | Infineon Technologies AG | SIXPACK 1200V 75A EasyPACK RoHS : Compliant |
| 435 | ||
| FP25R12W2T4B11BOMA1 | Infineon Technologies AG | IGBT 1200V 39A 1,85V EASY2B-411 RoHS : Compliant |
| 15 | ||
![]() Chip 1 Exchange | NSR0320MW2T1G | INSTOCK | 206,358 | |||
| WHZ1602W2-TMI-CW | Winstar Display Co Ltd | INSTOCK | 31,843 | |||
| NSVR1020MW2T1G | onsemi | INSTOCK RoHS : Compliant | 27,300 | |||
| NSR1020MW2T1G | onsemi | INSTOCK RoHS : Compliant | 15,600 | |||
| WHZ1602W2-TFI-CW | Winstar Display Co Ltd | INSTOCK | 10,199 | |||
FMW2T148![]() | ROHM Semiconductor | INSTOCK | 2,000 | |||
| HEX15-13.40156MHZ-12-40-F-H2-T3-W2-T | INSTOCK | 884 | ||||
| HEX15-13.56875MHZ-12-40R-F-H2-T3-W2-T | INSTOCK | 765 | ||||
![]() Avnet Abacus | MEC5-060-01-L-RA-W2-TR | Samtec Inc | (Alt: MEC5-060-01-L-RA-W2-TR) RoHS : Compliant | 0 | ||
| MEC5-040-01-L-RA-W2-TR | Samtec Inc | (Alt: MEC5-040-01-L-RA-W2-TR) RoHS : Compliant | 0 | |||
![]() Avnet Asia | MEC5-030-01-L-RA-W2-TR | Samtec Inc | Card Edge Connector, Dual Side, 1.57 mm, 60 Contacts, Surface Mount, Right Angle (Alt: MEC5-030-01-L-RA-W2-TR) RoHS : Compliant | 0 | ||
| NSR0320MW2T3G | onsemi | 1.0 A, 20 V, Schottky Barrier Diode, Low Forward Voltage. (Alt: NSR0320MW2T3G) RoHS : Compliant | 0 | |||
| NSR1020MW2T1G | onsemi | (Alt: NSR1020MW2T1G) RoHS : Compliant | 0 | |||
| NSVR1020MW2T1G | onsemi | (Alt: NSVR1020MW2T1G) RoHS : Compliant | 0 | |||
| NSVR0320MW2T1G | onsemi | 1.0 A, 20 V, Schottky Barrier Diode, Low Forward Voltage. (Alt: NSVR0320MW2T1G) RoHS : Compliant | 0 | |||
| NSR0320MW2T1G | onsemi | (Alt: NSR0320MW2T1G) RoHS : Compliant |
| 0 | ||
![]() Avnet Silica | NSR0320MW2T1G | onsemi | Small Signal Schottky Diode Single 23 V 900 mA 500 mV 5 A 125 C (Alt: NSR0320MW2T1G) RoHS : Compliant | 51,000 | ||
| QS5W2TR | ROHM Semiconductor | (Alt: QS5W2TR) RoHS : Compliant | 0 | |||
| NSR0320MW2T3G | onsemi | 10 A 20 V Schottky Barrier Diode Low Forward Voltage ONSSPCDDEBO6N2V (Alt: NSR0320MW2T3G) RoHS : Compliant | 0 | |||
| NSR1020MW2T1G | onsemi | Small Signal Schottky Diode Single 20 V 1 A 440 mV 5 A 125 C (Alt: NSR1020MW2T1G) RoHS : Compliant | 0 | |||
| NSR1020MW2T3G | onsemi | 10 A 20 VLow VF Schottky Diode ONSSPCDDEBO6N2V (Alt: NSR1020MW2T3G) RoHS : Compliant | 0 | |||
| NSR0320MW2T2G | onsemi | (Alt: NSR0320MW2T2G) RoHS : Compliant | 0 | |||
| NSVR1020MW2T1G | onsemi | 10 A 20 VLow VF Schottky Diode ONSSPCDDEBO6N2V (Alt: NSVR1020MW2T1G) RoHS : Compliant | 0 | |||
| NSVR0320MW2T1G | onsemi | 10 A 20 V Schottky Barrier Diode Low Forward Voltage ONSSPCDDEBO6N2V (Alt: NSVR0320MW2T1G) RoHS : Compliant | 0 | |||
![]() Component Electronics, Inc | NSR0320MW2T1G | onsemi | IN STOCK SHIP TODAY RoHS : Compliant |
| 4,725 | |
| 592D108X06R3W2T | Vishay Intertechnologies | IN STOCK SHIP TODAY | 1,000 | |||
![]() Flip Electronics | NSRLV20MW2T1G | onsemi | Stock, Ship Today RoHS : Compliant |
| 39,000 | |
![]() Venkel Ltd. | CTL1206FYW2T | VENKEL LTD | Chip Type LED;1206;Flat Lens;Yellow RoHS : Compliant | 0 | ||
| PLCC352820FYW2T | VENKEL LTD | PLCC LED;352820;Flat Lens;Yellow RoHS : Not Compliant | 0 | |||
![]() Vyrian | FP35R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 12,064 | ||
| FP25R12W2T4PBPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,978 | |||
| FP25R12W2T4PB11BPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,851 | |||
| FP35R12W2T4PBPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,788 | |||
| NSR1020MW2T1G | onsemi | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon RoHS : Compliant | 9,255 | |||
| FP25R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,776 | |||
| FP35R12W2T4PB11BPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,206 | |||
| FS50R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,182 | |||
| FP15R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES RoHS : Compliant | 8,023 | |||
| FS50R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7,752 | |||
| NSVR1020MW2T1G | onsemi | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon RoHS : Compliant | 7,038 | |||
| FP35R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 6,165 | |||
| TCI6636K2HDXAAW2T | Texas Instruments | 5,876 | ||||
| FP25R12W2T4 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 761 | |||
| FP25R12W2T4P_B11ENG | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 1200V V(BR)CES | 396 |
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