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W2TS-N2A-R2/ sprzedawcę |
| sprzedawcę | Numer części | Producent | Szczegółowy opis | Price | Qty. BuyNow | |
![]() TME | FS100R12W2T7B11BOMA1 | Infineon Technologies AG | Module: IGBT; transistor/transistor; IGBT three-phase bridge RoHS : Compliant |
| 0 | |
| O300.RP-NW2T.72CU | Baumer Electric Ag | Sensor: photoelectric; Range: 5m; NPN; DARK-ON,LIGHT-ON; plastic |
| 0 | ||
| FS75R12W2T4BOMA1 | Infineon Technologies AG | Module: IGBT; NTC thermistor; Ic: 107A; 375W; Field Stop,Trench RoHS : Compliant |
| 0 | ||
| FP50R12W2T7B11BOMA1 | Infineon Technologies AG | Module: IGBT; common emitter; NTC thermistor; Ic: 50A; AG-EASY2B-2 RoHS : Compliant |
| 0 | ||
| PS21L-PS02W2-T00 | Carlo Gavazzi Holding AG | Limit switch; adjustable lever R 19-91mm, rubber rollerØ50mm |
| 0 | ||
| NSVR1020MW2T1G | onsemi | Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape RoHS : Compliant |
| 0 | ||
| O300.RP-PW2T.72CU | Baumer Electric Ag | Sensor: photoelectric; Range: 5m; PNP; DARK-ON,LIGHT-ON; plastic |
| 0 | ||
| FS50R12W2T4B11BOMA | Infineon Technologies AG | Module: IGBT |
| 0 | ||
| FS50R12W2T7B11BOMA1 | Infineon Technologies AG | Module: IGBT; Ic: 50A; Field Stop,Trench RoHS : Compliant |
| 0 | ||
| PS21K-PS11W2-T00 | Carlo Gavazzi Holding AG | Limit switch; NC + NO; 10A; PG13,5; IP65; No.of mount.holes: 2 |
| 0 | ||
| PS21L-PT02W2-T00 | Carlo Gavazzi Holding AG | Limit switch; adjustable lever R 19-91mm, rubber rollerØ50mm |
| 0 | ||
| FP35R12W2T4PB11BPS | Infineon Technologies AG | Module: IGBT |
| 0 | ||
| O300.RP-NW2T.72N | Baumer Electric Ag | Sensor: photoelectric; Range: 5m; NPN; DARK-ON,LIGHT-ON; plastic |
| 0 | ||
| FP15R12W2T4BOMA1 | Infineon Technologies AG | Module: IGBT; NTC thermistor; Ic: 30A; Inverter; 145W; screw RoHS : Compliant |
| 0 | ||
| FP25R12W2T4PB11BPS | Infineon Technologies AG | Module: IGBT |
| 0 | ||
![]() ComSIT USA | NSR1020MW2T1G | onsemi | 20V SOD-323 Schottky Barrier Diode Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon RoHS : Compliant | 4,205 | ||
| FP35R12W2T4 | Infineon Technologies AG | IGBT-MODULE Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7 | |||
![]() PEI Genesis | SP28W2T | Amphenol Sine Systems |
| 0 | ||
| SS28W2T | Amphenol Sine Systems |
| 0 | |||
| SS20W2T | Amphenol Sine Systems |
| 0 | |||
| SP24W2T | Amphenol Sine Systems |
| 0 | |||
| SS24W2T | Amphenol Sine Systems |
| 0 | |||
| SP20W2T | Amphenol Sine Systems |
| 0 | |||
![]() PUI | 9W2TJ48P0H001 | Sanyo-Denki Co Ltd | RoHS : Compliant |
| 40 | |
| 9W2TJ24P0H001 | Sanyo-Denki Co Ltd | RoHS : Compliant |
| 24 | ||
| 9W2TN48P1H001 | Sanyo-Denki Co Ltd | RoHS : Compliant |
| 12 | ||
![]() Richardson RFPD | PCAAW-2-TR | Spectrum Control | PCB MOUNT ATTENUATOR RoHS : Compliant | 0 | ||
![]() Avnet Asia | NSVR1020MW2T1G | onsemi | 1.0 A, 20 V,?Low VF Schottky Diode. ONSSPCDDEBO6N2V; (Alt: NSVR1020MW2T1G) RoHS : Compliant | 0 | ||
| NSR0320MW2T3G | onsemi | 1.0 A, 20 V, Schottky Barrier Diode, Low Forward Voltage. ONSSPCDDEBO6N2V; (Alt: NSR0320MW2T3G) RoHS : Compliant | 0 | |||
| NSVR0320MW2T1G | onsemi | 1.0 A, 20 V, Schottky Barrier Diode, Low Forward Voltage. ONSSPCDDEBO6N2V; (Alt: NSVR0320MW2T1G) RoHS : Compliant | 0 | |||
| NSR1020MW2T1G | onsemi | Small Signal Schottky Diode, Single, 20 V, 1 A, 440 mV, 5 A, 125 ?C (Alt: NSR1020MW2T1G) RoHS : Compliant | 0 | |||
| MEC5-030-01-L-RA-W2-TR | Samtec Inc | (Alt: MEC5-030-01-L-RA-W2-TR) RoHS : Compliant | 0 | |||
| NSR0320MW2T1G | onsemi | Small Signal Schottky Diode, Single, 23 V, 900 mA, 500 mV, 5 A, 125 ?C (Alt: NSR0320MW2T1G) RoHS : Compliant |
| 0 | ||
![]() Avnet Silica | NSR0320MW2T1G | onsemi | Small Signal Schottky Diode Single 23 V 900 mA 500 mV 5 A 125 C (Alt: NSR0320MW2T1G) RoHS : Compliant | 51,000 | ||
| QS5W2TR | ROHM Semiconductor | (Alt: QS5W2TR) RoHS : Compliant | 0 | |||
| NSR0320MW2T2G | onsemi | (Alt: NSR0320MW2T2G) RoHS : Compliant | 0 | |||
| NSR1020MW2T3G | onsemi | 10 A 20 VLow VF Schottky Diode ONSSPCDDEBO6N2V (Alt: NSR1020MW2T3G) RoHS : Compliant | 0 | |||
| NSR0320MW2T3G | onsemi | 10 A 20 V Schottky Barrier Diode Low Forward Voltage ONSSPCDDEBO6N2V (Alt: NSR0320MW2T3G) RoHS : Compliant | 0 | |||
| NSR1020MW2T1G | onsemi | Small Signal Schottky Diode Single 20 V 1 A 440 mV 5 A 125 C (Alt: NSR1020MW2T1G) RoHS : Compliant | 0 | |||
| NSVR1020MW2T1G | onsemi | 10 A 20 VLow VF Schottky Diode ONSSPCDDEBO6N2V (Alt: NSVR1020MW2T1G) RoHS : Compliant | 0 | |||
| NSVR0320MW2T1G | onsemi | 10 A 20 V Schottky Barrier Diode Low Forward Voltage ONSSPCDDEBO6N2V (Alt: NSVR0320MW2T1G) RoHS : Compliant | 0 | |||
![]() Component Electronics, Inc | NSR0320MW2T1G | onsemi | IN STOCK SHIP TODAY RoHS : Compliant |
| 4,725 | |
| 592D108X06R3W2T | Vishay Intertechnologies | IN STOCK SHIP TODAY | 1,000 | |||
![]() Flip Electronics | NSRLV20MW2T1G | onsemi | Stock, Ship Today RoHS : Compliant |
| 39,000 | |
![]() Venkel Ltd. | PLCC352820FYW2T | VENKEL LTD | PLCC LED;352820;Flat Lens;Yellow RoHS : Not Compliant | 0 | ||
| CTL1206FYW2T | VENKEL LTD | Chip Type LED;1206;Flat Lens;Yellow RoHS : Compliant | 0 | |||
![]() Vyrian | FP35R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 12,064 | ||
| FS100R12W2T7B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,795 | |||
| FS75R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 107A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 9,568 | |||
| FP25R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,776 | |||
| MEC5-040-01-L-RA-W2-TR | Samtec Inc | Card Edge Connector RoHS : Compliant | 8,481 | |||
| FP35R12W2T4PB11BPSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,206 | |||
| FP15R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES RoHS : Compliant | 8,023 | |||
| FS50R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7,752 | |||
| NSVR1020MW2T1G | onsemi | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon RoHS : Compliant | 7,038 | |||
| 9W2TM24P4G001 | SANYO Semiconductor Co Ltd | 6,499 | ||||
| TCI6638K2KDXAAW2T | Texas Instruments | 6,320 | ||||
| FP35R12W2T4BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 6,165 | |||
| 9W2TM24P4H001 | SANYO Semiconductor Co Ltd | 6,100 | ||||
| FP25R12W2T4B11BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 5,788 | |||
| FP25R12W2T4 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 761 |
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