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FDMF2011 Arkusz danych(PDF) 28 Page - ON Semiconductor

Numer części FDMF2011
Szczegółowy opis  High Performance 100V Smart Power Stage Module
PDF  31 Pages
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FDMF2011 Arkusz danych(HTML) 28 Page - ON Semiconductor

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© 2016 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDMF2011 Rev.1.0
27
The gate-to-ground impedance is the parallel
combination of the gate drive (ZG_DRV) and the
MOSFET gate-to-source (ZMOS_Gate) paths. As
dVDS/dt increases, the more favorable path for
displacement current is through the capacitive
gate-source (CGS) path versus the highly
inductive and resistive gate drive loop. So
impedence through gate driver should be
minimized. The severity of the shoot through
current is difficult to predict.



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