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JCS640H Arkusz danych(PDF) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Numer części JCS640H
Szczegółowy opis  N- CHANNEL MOSFET
PDF  12 Pages
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Producent  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Strona internetowa  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS640H Arkusz danych(HTML) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

  JCS640H Datasheet HTML 1Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS640H Datasheet HTML 2Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS640H Datasheet HTML 3Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS640H Datasheet HTML 4Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS640H Datasheet HTML 5Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS640H Datasheet HTML 6Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS640H Datasheet HTML 7Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS640H Datasheet HTML 8Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS640H Datasheet HTML 9Page - JILIN SINO-MICROELECTRONICS CO., LTD. Next Button
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JCS640H
版本：201510B
5/12
特征曲线
ELECTRICAL CHARACTERISTICS (curves)
4
6
8
10
12
1
10
100
Notes:
1.250μs pulse test
2.V
DS=40V
25℃
V
GS [V]
150℃
10
0
10
1
0.0
5.0x10
2
1.0x10
3
1.5x10
3
2.0x10
3
C
rss
C
oss
C
iss
C
iss=Cgs+Cgd(Cds=shorted)
C
oss=Cds+Cgd
C
rss=Cgd
V
DS Drain-Source Voltage [V]
0
2
4
6
8
10
12
0
10
20
30
Notes:
I
D=18A
V
DS=40V
V
DS=100V
V
DS=160V
Q
g Toltal Gate Charge [nC]
Transfer Characteristics
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Capacitance Characteristics
Gate Charge Characteristics
Typical Output Characteristics, TC =
25 °C
Breakdown Voltage Variation
vs. Temperature



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