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SLG55596 Arkusz danych(PDF) 4 Page - Dialog Semiconductor |
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SLG55596 Arkusz danych(HTML) 4 Page - Dialog Semiconductor |
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4 / 10 page ![]() 000-0055596-05 Page 4 of 10 SLG55596 Preliminary Electrical Characteristics - Dynamic Performance Electrical Characteristics - Internal Resistors Electrical Characteristics - Logic Input CB VDD = 4.5V to 5.5V, TA = 25°C (unless specified otherwise) Parameter Description Condition/Note Min. Typ. Max. Unit TON Turn On Time VTDP or VTDM = 1.5V RL = 300Ω CL = 35pF --‘ 20 100 μs TOFF Turn Off Time VTDP or VTDM = 1.5V RL = 300Ω CL = 35pF --‘ 1 5 μs TPLH, TPHL TDP/TDM Switch Propagation Delay RL = RS = 50Ω -- 60 -- ps TSKEW Output Skew Skew between DP and DM when connected to TDP and TDM RL = RS = 50Ω -- 40 -- ps COFF TDP/TDM Off-Capacitance f = 1MHz --‘ 2.0 -- pF CON DP/DM On-Capacitance f = 240MHz --‘ 4.0 5.5 pF BW -3dB Bandwidth RL = RS = 50Ω -- 1000 -- MHz VISO Off-Isolation VTDP, VDP = 0dBm RL = RS =5 0Ω f = 250MHz -- -20 -- dB VCT Crosstalk VTDP, VDP = 0dBm RL = RS = 50Ω f = 250MHz -- -25 -- dB VDD = 4.5V to 5.5V, TA = 25°C (unless specified otherwise) Parameter Description Condition/Note Min. Typ. Max. Unit RPD DP/DM Short Pull-down 350 500 700 k Ω RTRP RP1/RP2 Ratio 0.8544 0.863 0.872 Ratio RRP RP1 + RP2 Resistance 69.75 93.0 115.18 k Ω RTRM RM1/RM2 Ratio 0.8544 0.863 0.872 Ratio RRM RM1 + RM2 Resistance 69.75 93.0 115.18 k Ω VDD = 4.5V to 5.5V, TA = 25°C (unless specified otherwise) Parameter Description Condition/Note Min. Typ. Max. Unit VIH CB Input Logic High 1.4 -- -- V VIL CB Input Logic Low -- -- 0.4 V IIN CB Input Leakage Current VDD = 5.5V 0 ≤ V CB ≤ VIL or VIH ≤ VCB ≤ VDD -1 -- 1 μA |
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