IPS032G datasheet(2/11 Pages) IRF

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IPS031G/IPS032G

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(1) Limited by junction temperature (pulsed current limited also by internal wiring)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-

erenced to SOURCE lead. (TAmbient = 25

oC unless otherwise specified). PCB mounting uses the standard footprint with 70

µm

copper thickness. All Sources leads of each mosfet must be connected together to get full current capability

Symbol Parameter

Min.

Max.

Units

Test Conditions

Vds

Maximum drain to source voltage

—

Vin

Maximum input voltage

-0.3

Iin, max

Maximum IN current

-10

+10

Isd cont.

Diode max. continuous current (1)

(rth=125oC/W) IPS031G

—

1.4

(for all sd mosfets, rth=85oC/W) IPS032G

—

Isd pulsed Diode max. pulsed current (1) (for ea. mosfet)

—15

Maximum power dissipation

(1)

(rth=125oC/W) IPS031G

—

(for all Pd mosfets, rth=85oC/W) IPS032G

—

1.5

ESD1

Electrostatic discharge voltage (Human Body)

—

C=100pF, R=1500

Ω,

ESD2

Electrostatic discharge voltage (Machine Model)

—

0.5

C=200pF, R=0

Ω, L=10µH

T stor.

Max. storage temperature

-55

150

Tj max.

Max. junction temperature

-40

150

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Rth1

Thermal resistance with standard footprint

—

100

—

Rth2

Thermal resistance with 1" square footprint

—

Rth1

Thermal resistance with standard footprint

(2 mos on)

(2 mosfets on)

—

Rth2

Thermal resistance with standard footprint

(1 mos on)

(1 mosfet on)

—

100

—

Rth3

Thermal resistance with 1" square footprint

(2 mos on)

(2 mosfets on)

—

Thermal Chacteristics

SOIC-8

SOIC-16

oC/W

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