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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IPW60R060P7 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPW60R060P7 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IPW60R060P7 IIPW60R060P7 · FEATURES · Static drain-source on-resistance: RDS(on)≤60mΩ · Enhancement mode: · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Fast Switching · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 48 A IDM Drain Current-Single Pulsed 151 A PD Total Dissipation @TC=25℃ 164 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.76 ℃ /W Rth(j-a) Channel-to-ambient thermal resistance 62 ℃ /W |
Podobny numer części - IPW60R060P7 |
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Podobny opis - IPW60R060P7 |
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