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IRFP4768 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części IRFP4768
Szczegółowy opis  N-Channel MOSFET Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRFP4768 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IRFP4768，IIRFP4768
·
FEATURES
·
Static drain-source on-resistance:
RDS(on)≤17.5mΩ
·
Enhancement mode:
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRITION
·
High Efficiency Synchronous Rectification in SMPS
·
Uninterruptible Power Supply
·
High Speed Power Switching
·
Hard Switched And High Frequency Circuits
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
250
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
93
A
IDM
Drain Current-Single Pulsed
370
A
PD
Total Dissipation @TC=25℃
520
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
0.29
℃
/W
Rth(j-a)
Channel-to-ambient thermal resistance
40
℃
/W


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