 |
Zakładka z wyszukiwarką danych komponentów |
|
|
Zakładka z wyszukiwarką danych komponentów |
|
IRLB4030 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IRLB4030 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRLB4030，IIRLB4030 · FEATURES · Static drain-source on-resistance: RDS(on) ≤4.3mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · reliable device for use in a wide variety of applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ± 16 V ID Drain Current-Continuous 180 A IDM Drain Current-Single Pulsed 730 A PD Total Dissipation @TC=25℃ 370 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.40 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62 ℃ /W |
Podobny numer części - IRLB4030 |
|
Podobny opis - IRLB4030 |
|
|
|
Link URL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Link do karty katalogowej | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Polish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
