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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ACE1357B Arkusz danych(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1357B Arkusz danych(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page  ACE1357B P-Channel Enhancement Mode Field Effect Transistor VER 1.1 1 Description These P-Channel enhancement mode field effect transistors are produced using high cell density, DMOS technology. Features VDS (V) = -20V,ID = -2A (VGS=-4.5V) RDS(ON)<120mΩ @ VGS= -4.5V RDS(ON)<150mΩ @ VGS= -2.5V TSOT-23-3 Package Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Drain Current (Continuous) TA=25℃ ID -2 A TA=70℃ -1.8 Drain Current (Pulsed) IDM -7 A Power Dissipation TA=25℃ PD 1 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type TSOT-23-3 Ordering information ACE1357B XXX + H BMS: TSOT-23-3 Pb - free Halogen - free |
Podobny numer części - ACE1357B |
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Podobny opis - ACE1357B |
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