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ACE5807B Arkusz danych(PDF) 2 Page - ACE Technology Co., LTD.

Numer części ACE5807B
Szczegółowy opis  P-Channel Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Producent  ACE [ACE Technology Co., LTD.]
Strona internetowa  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE5807B Arkusz danych(HTML) 2 Page - ACE Technology Co., LTD.

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ACE5807B
P-Channel Enhancement Mode Field Effect Transistor
VER 1.2
2
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS= 0V, ID= -
250μA
-12
V
Zero Gate Voltage Drain Current
IDSS1
VDS = -12 V, VGS = 0V
-1
μA
Gate Threshold Voltage
VGS(TH)
VGS = VDS , IDS= -
250μA
-0.4
-0.7
-1
V
Gate Leakage Current
IGSS
VGS= ±8V , VDS=0V
±100
nA
Drain-Source On-state
Resistance
RDS(on)
VGS = -4.5V , ID= -6.7A
12
18
mΩ
VGS = -2.5V , ID= -6.2A
15
22
mΩ
Forward Trans Conductance
gFS
VDS= -10V , ID= -6.7A
40
S
Diode Forward Voltage
VSD
ISD= -1.6A , VGS= 0V
-0.6
-1.0
V
Maximum Body-Diode
Continuous Current
IS
-16
A
Switching
Total Gate Charge
Qg
VDS= -6V, ID= -10A,
VGS= -4.5V
35
48
nC
Gate-Source Charge
Qgs
5
nC
Gate-Drain Charge
Qgd
10
nC
Turn-on Delay Time
td( on )
VDD= -10V, RL=0.75
Ω,
ID= -1A, VGEN= -4.5V
RG= 10
Ω
11
ns
Turn-on Rise Time
tr
30
ns
Turn-off Delay Time
td( off )
30
ns
Turn-off Fall Time
tf
10
ns
Dynamic
Input Capacitance
Ciss
VGS=0V,VDS= -10V,
f= 1.0MHz
2700
pF
Output Capacitance
Coss
680
pF
Reverse Transfer Capacitance
Crss
590
pF
Note:
A.
The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C.
B.
The Power dissipation PD is based on RθJAt ≤ 10s value and the maximum allowed junction temperature of 150℃. The value
in any given application depends on the user's specific board design.
C.
Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150℃. Ratings are based on low frequency and duty
cycles to keep initial TJ=25℃.
D.
The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E.
The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F.
These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large
heatsink, assuming a maximum junction temperature of TJ(MAX)=150℃. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H.
These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C.



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