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ACE5807B Arkusz danych(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE5807B Arkusz danych(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 6 page ![]() ACE5807B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 2 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS= 0V, ID= - 250μA -12 V Zero Gate Voltage Drain Current IDSS1 VDS = -12 V, VGS = 0V -1 μA Gate Threshold Voltage VGS(TH) VGS = VDS , IDS= - 250μA -0.4 -0.7 -1 V Gate Leakage Current IGSS VGS= ±8V , VDS=0V ±100 nA Drain-Source On-state Resistance RDS(on) VGS = -4.5V , ID= -6.7A 12 18 mΩ VGS = -2.5V , ID= -6.2A 15 22 mΩ Forward Trans Conductance gFS VDS= -10V , ID= -6.7A 40 S Diode Forward Voltage VSD ISD= -1.6A , VGS= 0V -0.6 -1.0 V Maximum Body-Diode Continuous Current IS -16 A Switching Total Gate Charge Qg VDS= -6V, ID= -10A, VGS= -4.5V 35 48 nC Gate-Source Charge Qgs 5 nC Gate-Drain Charge Qgd 10 nC Turn-on Delay Time td( on ) VDD= -10V, RL=0.75 Ω, ID= -1A, VGEN= -4.5V RG= 10 Ω 11 ns Turn-on Rise Time tr 30 ns Turn-off Delay Time td( off ) 30 ns Turn-off Fall Time tf 10 ns Dynamic Input Capacitance Ciss VGS=0V,VDS= -10V, f= 1.0MHz 2700 pF Output Capacitance Coss 680 pF Reverse Transfer Capacitance Crss 590 pF Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. B. The Power dissipation PD is based on RθJAt ≤ 10s value and the maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150℃. Ratings are based on low frequency and duty cycles to keep initial TJ=25℃. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150℃. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. |
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