SC6579 datasheet(4/9 Pages) SILAN

4 / 9 page

Silan

Semiconductors

SC6579

HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD

Rev: 1.0

2001.12.30

(Continued)

Note1. The signal T57 has a phase lead of 123

° (±180°) relative to the ARI carrier at output SCOUT.

Parameter

Symbol

Test condition

Min.

Typ.

Max.

Unit

Digital demodulator and outputs QUAL, RDDA, T57, OSCO and RDCL (pins 1, 2, 14, 15 and 16)

HIGH-level output voltage

VOH

IQ = -20 mA; VDDD = 4.5 V

4.4

LOW-level output voltage

VOL

IQ = 3.2 mA; VDDD = 5.5 V

0.4

Nominal Clock Frequency RDCL

fRDCL

1187.5

Jitter of RDCL

∆tRDCL

µs

Nominal Subcarrier Frequency T57

fT57

note 1

57.0

kHz

VDDD = 4.5 V; V14 = 0.4 V

1.5

Output Current OSCO (pin 14)

VDDD = 4.5 V; V14 = 4.1 V

-1.6

VDDD = 4.5 V; VO = 0.4 V

5.9

Output Current QUAL, RDDA, T57,

RDCL (pins 1, 2, 15 and 16)

VDDD = 4.5 V; VO = 4.1 V

-5.3

4.332 MHz crystal parameters

XTAL Frequency

4.332

MHz

Maximum Permitted Tolerance

∆fmax

±50

10 -6

Tamb =25°C

±20

10 -6

Adjustment Tolerance of f0

∆fo

Tamb = -40 to +85 °C

±25

10 -6

Load Capacitance

Resonance Resistance

Rxtal

Ω

8.664 MHz crystal parameters

XTAL Frequency

8.664

MHz

Maximum Permitted Tolerance

∆fmax

±50

10 -6

Tamb =25°C

±30

10 -6

Adjustment Tolerance of f0

∆fo

Tamb = -40 to +85 °C

±30

10 -6

Load Capacitance

Resonance Resistance

Rxtal

Ω

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