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M48Z35 Arkusz danych(PDF) 12 Page - STMicroelectronics

Numer części M48Z35
Szczegółowy opis  256 Kbit (32 Kbit x 8) ZEROPOWER SRAM
PDF  20 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48Z35 Arkusz danych(HTML) 12 Page - STMicroelectronics

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M48Z35, M48Z35Y
12/20
Data Retention Mode
With valid VCC applied, the M48Z35/Y operates as
a conventional BYTEWIDE™ static RAM. Should
the supply voltage decay, the RAM will automati-
cally power-fail deselect, write protecting itself
when VCC falls within the VPFD(max), VPFD(min)
window. All outputs become high impedance, and
all inputs are treated as “don't care.”
Note: A power failure during a WRITE cycle may
corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's con-
tent. At voltages below VPFD(min), the user can be
assured the memory will be in a write protected
state, provided the VCC fall time is not less than tF.
The M48Z35/Y may respond to transient noise
spikes on VCC that reach into the deselect window
during the time the device is sampling VCC. There-
fore, decoupling of the power supply lines is rec-
ommended.
When VCC drops below VSO, the control circuit
switches power to the internal battery which pre-
serves data. The internal button cell will maintain
data in the M48Z35/Y for an accumulated period of
at least 10 years (at 25°C) when VCC is less than
VSO.
As system power returns and VCC rises above
VSO, the battery is disconnected, and the power
supply is switched to external VCC. Write protec-
tion continues until VCC reaches VPFD(min) plus
tREC(min). Normal RAM operation can resume
tREC after VCC exceeds VPFD(max).
For more information on Battery Storage Life refer
to the Application Note AN1012.
Figure 11. Power Down/Up Mode AC Waveforms
Table 9. Power Down/Up AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass-
es VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
4. tREC (min) = 20ms for industrial temperature Grade (6) device.
Symbol
Parameter(1)
Min
Max
Unit
tPD
E or W at VIH before Power Down
0µs
tF
(2)
VPFD (max) to VPFD (min) VCC Fall Time
300
µs
tFB
(3)
VPFD (min) to VSS VCC Fall Time
10
µs
tR
VPFD (min) to VPFD (max) VCC Rise Time
10
µs
tRB
VSS to VPFD (min) VCC Rise Time
1µs
tREC
(4)
VPFD (max) to Inputs Recognized
40
200
ms
AI01168C
VCC
INPUTS
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tPD
tRB
tDR
VALID
VALID
(PER CONTROL INPUT)
RECOGNIZED
RECOGNIZED
VPFD (max)
VPFD (min)
VSO
tREC



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