Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

OP552B Arkusz danych(PDF) 2 Page - TT Electronics.

Numer części OP552B
Szczegółowy opis  NPN Silicon Phototransistor
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  TTELEC [TT Electronics.]
Strona internetowa  http://www.ttelectronics.com/
Logo TTELEC - TT Electronics.

OP552B Arkusz danych(HTML) 2 Page - TT Electronics.

  OP552B Datasheet HTML 1Page - TT Electronics. OP552B Datasheet HTML 2Page - TT Electronics. OP552B Datasheet HTML 3Page - TT Electronics. OP552B Datasheet HTML 4Page - TT Electronics. OP552B Datasheet HTML 5Page - TT Electronics. OP552B Datasheet HTML 6Page - TT Electronics.  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
OP550, OP552, OP555, OP560, OP565,
OP750 Series
Issue A
08/2016
Page 2
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
OP555, OP565 (A, B, C, D)
OP550, OP552, OP560, OP750, OP770 (A, B, C, D)
Pin #
Sensor
1
Emitter
2
Collector
1
2
OP555 - CONTAINS POLYSULFONE
To avoid stress cracking, we suggest using
ND Industries’ Vibra-Tite for thread-locking.
Vibra-Tite evaporates fast without causing structural failure in
OPTEK'S molded plastics.
INCHES
[MILLIMETERS]
DIMENSIONS ARE IN:
INCHES
[MILLIMETERS]
DIMENSIONS ARE IN:
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum 20 grams force may be applied
to the leads when soldering.
2. For OP550, OP560, OP555 and OP565, derate linearly 1.33 mW/° C above 25° C. For OP552, derate linearly 1.25 mW/° C above 25° C.
3. For all phototransistors in this series, the light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm. For OP550 and
OP555 only, a radiometric intensity level that varies less than 10% over the entire lens surface of the phototransistor being tested applies.
4. To calculate typical collector dark current in µA, use the formula ICEO=10
(0.040 T
A
- 3.4), where T
A is ambient temperature in °C.



Html Pages

1 2 3 4 5 6


Arkusz danych Pobierz

Go To PDF Page


Link URL



Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Link do karty katalogowej    |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com