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LAT676 Arkusz danych(PDF) 18 Page - OSRAM GmbH |
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LAT676 Arkusz danych(HTML) 18 Page - OSRAM GmbH |
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18 / 22 page ![]() LA T676 specified at 2mA 18 Version 1.2 | 2018-01-26 Chip Technology: 1: TSN 3: standard InGaN 4: AlGaAs (RECLED) 5: HOP 2000 6: Standard InGalP 9: TSN low current B: HOP 2000 C: ATON D: Low cost ThinGaN/ Thinfilm (e.g. 6mil) F: Thinfilm InGaAlP G: ThinGaN(Thinfilm InGaN) (Subcon:Sapphire) K: InGaAlP low current S: standard InGaN low current 0: TSN ´ Encapsulant Type / Lens Properties 7: Colorless clear or white volume conversion (resin encapsulation) S: Silicone (with or without diffuser) Wavelength Emission Color Color coordinates according (λdom typ.) CIE 1931/Emission color: A: 617 nm amber W: white S: 633 nm super red UW: ultra white T: 528 nm true green CB: color on demand blue Y: 587 nm yellow CG: color on demand green O: 606 nm orange CL: color on demand lagune G: 570 nm green P: 560 nm pure green R: 625 nm red B: 470 nm blue H: 645 nm hyper-red V: 505 nm verde green L: Light emitting diode Package Type T: TOPLED Lead / Package Properties 6: folded leads 7: reverse gullwing leads T: folded leads, improved corrosion stability Au-LF), w/o TiO2 jetting V: folded leads and UX:3 w/ improved corrosion stability (Au-LF), TiO2 jetting Type Designation System L A T 6 7 6 |
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