IXTP08N120P datasheet(4/4 Pages) IXYS

Numer części	IXTP08N120P

Szczegółowy opis	N-Channel Enhancement Mode Avalanche Rated

PDF	4 Pages

Scroll/Zoom	100%

Producent	IXYS [IXYS Corporation]

Strona internetowa	http://www.ixys.com

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA08N120P

IXTP08N120P

IXYS REF: T_08N120P(1C) 4-02-08-A

Fig. 7. Transconductance

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

ID - Amperes

TJ = - 40ºC

125ºC

25ºC

Fig. 8. Forward Voltage Drop of

Intrinsic Diode

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.4

0.5

0.6

0.7

0.8

0.9

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 10. Gate Charge

QG - NanoCoulombs

VDS = 600V

I D = 0.4A

I G = 1mA

Fig. 9. Capacitance

100

1,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 11. Maximum Transient Thermal Impedance

0.1

1.0

10.0

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

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