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LP6470T Arkusz danych(PDF) 4 Page - Lowpower Semiconductor inc |
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LP6470T Arkusz danych(HTML) 4 Page - Lowpower Semiconductor inc |
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4 / 10 page ![]() LP6470T-01 Aug.-2017 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 10 Preliminary Datasheet LP6470T Electrical Characteristics VIN=12V, VEN=5V, TA=25℃, unless otherwise noted Symbol Parameter Condition Min Typ Max Units VIN Input Voltage 3.5 16 V VOUT Output Voltage Range 0.766 12 V IQ Quiescent Current VFB=0.85V 450 900 µA ISHDN Shutdown Current VEN=GND 6 µA ILIM P-Channel Current Limit 3 A RDS(ON)H High-Side Switch On Resistance 100 mΩ RDS(ON)L Low-Side Switch On Resistance 80 mΩ ΔVLine-reg/ΔVIN Line Regulation VIN=4.5V to 12V 0.2 %/V VFB Feedback Threshold Voltage Accuracy 18V>VIN>4.5V 0.751 0.766 0.781 V IFB FB Leakage Current VFB=1.0V 30 nA fOSC Oscillator Frequency 600 KHz TSD Over-Temperature Shutdown Threshold 150 ℃ THYS Over-Temperature Shutdown Hysteresis 20 ℃ VINOVP Over Voltage Protection Threshold 18 V VINOVP-HYS Over Voltage Protection Hysteresis 1 V DMAX Maximal duty cycle 95 % VEN(L) Enable Threshold Low 0.4 V VEN(H) Enable Threshold High 1.8 V IEN Input Low Current VIN=VEN=5V 4 µA Note: Output Voltage: VOUT = VFB × ( 1 + R1 / R2 ) Volts; |
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