MHVIC910HR2 datasheet(2/12 Pages) MOTOROLA

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RF Device Data

Freescale Semiconductor

MHVIC910HR2

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

0 (Minimum)

Machine Model

M2 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22−A113, IPC/JEDEC J−STD−020

240

°C

Table 5. Recommended Operating Ranges

Parameter

Symbol

Value

Unit

Drain Supply Voltage

VDD

Vdc

3rd Stage Quiescent Current

IDQ3

150

2nd Stage Quiescent Current

IDQ2

1st Stage Quiescent Current

IDQ1

Table 6. Electrical Characteristics (TA = 25°C matched to a 50 Ω system, unless otherwise noted)

VDD = 26 V, VGS set for IDQ3 = 150 mA, frequency range 921−960 MHz

Characteristic

Symbol

Min

Typ

Max

Unit

Frequency Range

fRF

921

—

960

MHz

Output Power @ 1 dB Compression Point

P @ 1dB

—

dBm

Power Gain @ P1dB

G @ 1dB

—

Power Added Efficiency @ 1 dB Compression Point

PAE @ 1dB

—

Input Return Loss @ P1dB

IRL @ 1dB

—

−15

−10

Gain Flatness @ 40 dBm

Variation (TC = −30 to +85°C @ 40 dBm)

—

Load Stability

(VDS = 24 V to 28 V, Pout = P1dB Down to 0 dBm,

All Phase Angles)

VSWR

10:1

—

Ruggedness

(VDS = 26 V, Pout = 42 dBm, Load VSWR = 10:1,

All Phase Angles)

No Damage After Test

NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

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