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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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AOD512 Arkusz danych(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOD512 Arkusz danych(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOD512 30V N-Channel AlphaMOS General Description Product Summary VDS ID (at VGS=10V) 70A RDS(ON) (at VGS=10V) < 2.4m Ω RDS(ON) (at VGS = 4.5V) < 3.2m Ω Application 100% UIS Tested 100% Rg Tested Symbol VDS VGS V ±20 Gate-Source Voltage Drain-Source Voltage 30 V Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial G D S TO252 DPAK TopView Bottom View G G D D S S D VGS IDM IAS EAS VDS Spike VSPIKE TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC 100ns 36 V Maximum Junction-to-Ambient A °C/W RθJA 16 41 20 Units Junction and Storage Temperature Range -55 to 175 °C Thermal Characteristics Parameter Typ V ±20 Gate-Source Voltage Max TA=70°C ID 70 55 TC=25°C TC=100°C 280 Pulsed Drain Current C Continuous Drain Current G mJ Avalanche Current C 22 Continuous Drain Current 151 27 A 55 Avalanche energy L=0.1mH C A TA=25°C IDSM A W Power Dissipation A PDSM W TA=70°C 83 1.6 TA=25°C TC=25°C 2.5 33 TC=100°C Power Dissipation B PD Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 0.8 50 1.5 G D S TO252 DPAK TopView Bottom View G G D D S S D Rev 0: Nov 2011 www.aosmd.com Page 1 of 6 |
Podobny numer części - AOD512 |
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Podobny opis - AOD512 |
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