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PXAC182002FC Arkusz danych(PDF) 4 Page - Cree, Inc

Numer części PXAC182002FC
Szczegółowy opis  Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
PDF  8 Pages
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Producent  CREE [Cree, Inc]
Strona internetowa  http://www.cree.com/
Logo CREE - Cree, Inc

PXAC182002FC Arkusz danych(HTML) 4 Page - Cree, Inc

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 03, 2018-06-25
4
PXAC182002FC
Typical Performance (cont.)
Load Pull Performance
Main Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, IDQ = 405 mA
P1dB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Zs
[
W]
Zl
[
W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
hD
[%]
Zl
[
W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
hD
[%]
1810
3.94 – j10.15 2.92 – j5.27
19.2
49.4
86
54.0
6.49 – j2.19
21.9
47.2
52
66.6
1840
5.13 – j10.93 2.93 – j4.16
19.5
49.3
85
57.6
5.82 – j2.44
21.7
47.5
56
66.3
1880
5.90 – j12.44 2.73 – j5.17
19.2
49.5
89
55.2
4.53 – j2.29
21.5
47.7
59
67.9
Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, IDQ = 685 mA
P1dB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Zs
[
W]
Zl
[
W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
hD
[%]
Zl
[
W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
hD
[%]
1810
3.71 – j9.13 4.64 – j5.44
20.5
50.9
123
55.5
3.52 – j2.84
22.7
49.7
94
66.2
1840
4.76 – j8.65 4.66 – j5.68
20.6
50.7
117
54.5
3.39 – j3.01
23.2
49.2
84
64.1
1880
6.40 – j9.13 4.63 – j5.74
20.8
50.7
116
54.3
2.83 – j3.50
23.1
49.2
83
64.3
-30
-25
-20
-15
-10
10
12
14
16
18
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
CW Performance Small Signal
Gain & Input Return Loss
VDD = 28 V, IDQ = 400 mA
IRL
Gain
c182002fc_g6



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