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VVZ24 Arkusz danych(PDF) 3 Page - IXYS Corporation |
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VVZ24 Arkusz danych(HTML) 3 Page - IXYS Corporation |
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3 / 3 page ![]() © 2003 IXYS All rights reserved 3 - 3 VVZ 24 Fig. 1 Surge overload current per chip I FSM: Crest value, t: duration Fig. 3 Gate trigger characteristics Triggering: Fig. 2 I2t versus time (1-10 ms) per chip Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Transient thermal impedance junction to heatsink Constants for Z thJK calculation iR thi (K/W) t i (s) 1 0.17 0.028 2 1.4 0.44 3 1.1 2.6 t s 10-3 10-2 10-1 100 101 102 0 1 2 3 Zth JK Zth JK K/W 1 10 100 1000 0.1 1 10 I G V G mA 1: I GT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C V 4: P GAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W I GD, TVJ = 125°C 4 2 1 5 6 3 |
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