MCD95-08io8B

0

50

100

T

T

t [ms]

t [s]

0.001

0.01

0.1

1

500

1000

1500

2000

2500

2

3

4 5 6 7 8 9 0

1

1

0

25

50

75

100 125 150

0

50

100

150

200

250

I

TSM

[A]

I

TAVM

[A]

0

50

100

150

0

50

100

150

200

250

P

tot

[W]

I

0

50

100

150

0

100

200

300

0

200

400

600

800

1000

I

[A

T

180° sin

120°

60°

30°

DC

T

50 Hz

80% V

RRM

T

P

tot

[W]

I

dAVM

[A]

T

V

B6

Circuit

3x MCC95 or

3x MCD95

180° sin

120°

60°

30°

DC

R

0.4

0.6

0.8

1

1.2

1.5

2

3

0.01

0.1

1

10

0.1

1

10

100

0.01

0.1

1

10

0.1

1

10

100

I

V

G

[V]

I

T

t

gd

[μs]

limit

typ.

t

30 µs

t

60 W

P

8 W

I

VJ = -40°C)

I

VJ = 25°C)

I

GD

R

0.3

0.08

0.12

0.15

0.03

0.06

0.5

Fig. 1 Surge overload current I

I

Fig. 2 I

Fig. 3 Max. forward current

at case temperature

Fig. 4 Power dissipation vs. on-state current & ambient temperature

(per thyristor or diode)

Fig. 5 Gate trigger characteristics

Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct

output current and ambient temperature

Fig. 7 Gate trigger delay time

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20161222c

Data according to IEC 60747and per semiconductor unless otherwise specified

© 2016 IXYS all rights reserved