MCD72-14io1B

I

TSM

I

FSM

[A]

2500

2000

1500

1000

500

0

t [s]

Fig. 1 Surge overload current

I

T

T

50 Hz, 80% V

RRM

V

t [ms]

1

2

3

6

8

10

T

T

Fig. 3 Maximum forward current

at case temperature

250

200

150

100

50

0

0

50

100

150

I

TAVM

[A]

T

DC

180° sin

120°

60°

30°

Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)

DC

180° sin

120°

60°

30°

0

50

100

150

T

I

0

50

100

150

250

200

150

100

50

0

P

T

[W]

R

thJA

[K/W]

0.4

0.6

0.8

1

1.2

1.5

2

3

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current

and ambient temperature

R

thKA

[K/W]

0.1

0.15

0.2

0.25

0.3

0.4

0.5

0.6

0

50

100

150

T

I

0

100

200

P

tot

[W]

200

0

400

600

800

1200

Circuit

B6

3x MCC72 or

3x MCD72

1200

300

0.1

1

10

100

V

G

[V]

I

I

GD

I

I

0°C)

I

t

30 µs

t

P

60 W

P

8 W

0.1

1

10

100

I

T

t

gd

[µs]

limit

typ.

0.01

0.1

1

10

0.01

0.1

1

10

Fig. 5 Gate trigger characteristics

Fig. 7 Gate trigger delay time

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20161222b

Data according to IEC 60747and per semiconductor unless otherwise specified

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