AFM906N datasheet(3/16 Pages) NXP

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AFM906N

RF Device Data

NXP Semiconductors

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS =7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

1.7

—

Output Capacitance

(VDS =7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

39.8

—

Input Capacitance

(VDS =7.5 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

68.9

—

Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) VDD =7.5 Vdc, IDQ = 100 mA, Pin = 18dBm,f= 520 MHz

Common--Source Amplifier Output Power

Pout

—

6.8

—

Drain Efficiency

D

—

70.8

—

Load Mismatch/Ruggedness (In NXP Test Narrowband Production Fixture, 50 ohm system) IDQ = 100 mA

Frequency

(MHz)

Signal

Type

VSWR

(dBm)

Test Voltage, VDD

Result

520

> 65:1 at all Phase Angles

(3 dB Overdrive)

10.8

No Device Degradation

Table 6. Ordering Information

Device

Tape and Reel Information

Package

AFM906NT1

T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel

DFN 4  6

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