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AFT05MS003N Arkusz danych(PDF) 7 Page - NXP Semiconductors

Numer części AFT05MS003N
Szczegółowy opis  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
PDF  20 Pages
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Producent  NXP [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT05MS003N Arkusz danych(HTML) 7 Page - NXP Semiconductors

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AFT05MS003N
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND
REFERENCE CIRCUIT
125
Gps
f, FREQUENCY (MHz)
Figure 5. Power Gain, Drain Efficiency and Output Power
versus Frequency at a Constant Pin
12
21
1
75
65
55
45
4
3
2
D
19
17
13
165
35
VDD =7.5 Vdc
Pin = 17.8 dBm
IDQ =60 mA
Pout
18
16
15
14
155
135
185
20
145
5
175
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Gate--Source Voltage
4
0.5
1.5
2
3
2.5
0.5
f = 155 MHz, VDD =7.5 Vdc
Pin = 13.0 dBm
0
0
Detail A
0.5
1.5
Detail A
VGS, GATE--SOURCE VOLTAGE (VOLTS)
1.5
0.1
2.5
1
0.2
0.6
4
1
2
1
2.5
2
0.3
Pin = 16.0 dBm
3
3.5
3.5
0.4
0.5
f = 155 MHz, VDD =7.5 Vdc
Pin = 13.0 dBm
Pin = 16.0 dBm
3
Figure 7. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency
Pin, INPUT POWER (mW)
17
0110
Gps
4
0
2
19
21
20
60
80
10
Pout
VDD =7.5 Vdc
IDQ =60 mA
15
155 MHz
155 MHz
175 MHz
135 MHz
D
135 MHz
27
9
40
1
11
23
25
175 MHz
13
20
30
40
50
60
70
80
90 100
0
135 MHz
175 MHz
155 MHz



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