AFT09MP055N datasheet(3/21 Pages) NXP

Numer części	AFT09MP055N

Szczegółowy opis	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

PDF	21 Pages

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Producent	NXP [NXP Semiconductors]

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AFT09MP055NR1 AFT09MP055GNR1

RF Device Data

Freescale Semiconductor, Inc.

Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 12.5 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

1.9

—

Output Capacitance

(VDS = 12.5 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

Input Capacitance

(VDS = 12.5 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss (2)

—

690

—

Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 12.5 Vdc, IDQ(A+B) = 550 mA, Pin = 1 W,f= 870 MHz

Common--Source Amplifier Output Power

Pout

—

Drain Efficiency

ηD

—

69.0

—

1. Each side of device measured separately.

2. Value includes input matching network.

3. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GN) parts.

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