STV0684 datasheet(37/49 Pages) STMICROELECTRONICS

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STV0684

Electrical Characteristics

4.5.8

AC characteristics for NAND flash operation

Note: 1 All parameters relating to the CE_n signal are omitted as it is not enabled/disabled during execution

of any NAND flash operation i.e. it is permanently tied low.

2 All timings are worst case

3 Conforms to both Samsung and Toshiba specifications as outlined in datasheets.

4 The NAND flash timings detailed here are guaranteed by design.

5 The loading factor used for the characterization is equivalent to 40pF.

4.5.9

Compact flash timing

There are two types of bus cycles and timing sequences that occur in the PCMCIA type interface,

direct mapped I/O transfer and memory access. The STV0684 will only support the memory

mapped mode.

Table 12: AC characteristics for NAND flash operation

Symbol

Parameter

Min

Typical

Max

Units

tCLS

CLE Set-up time

61.4

62.4

tCLH

CLE Hold time

83.2

tWP

WE-n Pulse Width

83.2

tALS

ALE Set-up time

82.6

83.2

tALH

ALE Hold time

82.4

83.2

tDS

Data Set-up time

82.6

83.2

tDH

Data Hold time

61.8

62.4

tWC

Write Cycle time

145.1

145.6

tWH

WE_n High Hold time

61.9

62.4

tRR

Ready to RE_n Low

tRP

RE_n Pulse Width

83.2

tRC

Read Cycle time

187.2

tREA

RE_n Access time

43.2

tREH

RE_n High Hold time

103.5

104

tWHR

WE_n High to RE_n Low

124.2

124.8

Data Transfer from Cell to Register

25.015

µs

tWB

WE_n High to Busy

41.6

215.3

tRST

Device Resetting (Read)

5.015

µs

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