DSP8-12AS

V

=

V

A²s

A²s

A²s

A²s

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

1.16

R

1.5

K/W

R

min.

8

V

10

T

= 25°C

VJ

T

=

°C

VJ

mA

0.2

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

160

P

tot

100

W

T

= 25°C

C

R

K/W

8

1200

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions

Unit

1.35

T

= 25°C

VJ

150

V

F0

V

0.79

T

=

°C

VJ

175

30

mΩ

V

1.08

T

=

°C

VJ

I =

A

F

V

8

1.34

I =

A

F

16

I =

A

F

16

threshold voltage

slope resistance

for power loss calculation only

µA

150

V

1200

max. repetitive reverse blocking voltage

T

= 25°C

VJ

4

junction capacitance

V =

V;

400

T

= 25°C

f = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine

T

= 45°C

VJ

max. forward surge current

T

=

°C

VJ

150

I²t

T

= 45°C

value for fusing

T

=

°C

150

V

= 0 V

R

V

= 0 V

R

V

= 0 V

V

= 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T

=

°C

VJ

175

120

130

50

50

A

A

A

A

100

110

72

70

1200

FAV

d =

rectangular

0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

1300

0.25

IXYS reserves the right to change limits, conditions and dimensions.

20130107b

Data according to IEC 60747and per semiconductor unless otherwise specified

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