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4N65 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części 4N65
Szczegółowy opis  isc N-Channel MOSFET Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

4N65 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
4N65
DESCRIPTION
·
Drain Current ID= 4A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 650V(Min)
·
Fast Switching Speed
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
650
V
VGS
Gate-Source Voltage
±
30
V
ID
Drain Current-continuous@ TC=25℃
4
A
ID(puls)
Pulse Drain Current
16
A
Ptot
Total Dissipation@TC=25℃
36
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.47
℃
/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃
/W


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