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MBRF30200CT Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBRF30200CT Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBRF30200CT FEATURES · Plastic material used carriers Underwriter Laboratory · Metal silicon junction, majority carrier conduction · Low IR · Low VF · Center tap connection · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage tw=500ns;duty=1/40 200 140 200 V IF(AV) Average Rectified Forward Current 30 A IF(RMS) RMS Forward current (Rated VR,Sqqre Wave,20KHz) 30 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 200 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ |
Podobny numer części - MBRF30200CT |
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Podobny opis - MBRF30200CT |
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