MHT2000N datasheet(20/21 Pages) NXP

Numer części	MHT2000N

Szczegółowy opis	RF LDMOS Integrated Power Amplifiers

PDF	21 Pages

Scroll/Zoom	100%

Producent	NXP [NXP Semiconductors]

Strona internetowa	http://www.nxp.com

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RF Device Data

Freescale Semiconductor, Inc.

MHT2000NR1 MHT2000GNR1

APPENDIX A

MHT2000NR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA (continued)

Table A--1. Electrical Characteristics (TC =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 -- On Characteristics

Gate Quiescent Voltage

(VDS =28 Vdc, IDQ1 =77 mA)

VGS(Q)

—

2.7

—

Vdc

Fixture Gate Quiescent Voltage

(VDD =28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test)

VGG(Q)

12.5

15.8

19.5

Vdc

Stage 2 -- On Characteristics

Gate Quiescent Voltage

(VDS =28 Vdc, IDQ2 = 275 mAdc)

VGS(Q)

—

2.7

—

Vdc

Fixture Gate Quiescent Voltage

(VDD =28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test)

VGG(Q)

Vdc

Table A--2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

(Case Temperature 81C, Pout = 25 W CW)

Stage 1, 28 Vdc, IDQ1 =77 mA

Stage 2, 28 Vdc, IDQ2 = 275 mA

RJC

5.5

1.3

C/W

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