MBR60100CT datasheet(1/2 Pages) ISC

Numer części	MBR60100CT

Szczegółowy opis	Schottky Barrier Rectifier

PDF	2 Pages

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

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1

Schottky Barrier Rectifier

MBR60100CT

FEATURES

·

Metal silicon junction, majority carrier conduction

·

Low leakage current, low power loss, high efficiency

·

Dual rectifier construction, positive center tap

·

Guardring for overvoltage protection

·

High frequency operation

·

Low stored charge majority carrier conduction

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Switching power supply

·

Converters

·

Free-Wheeling diodes

·

Reverse battery protection

·

Center tap configuration

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNI

T

VRRM

VRMS

VR

Peak Repetitive Reverse Voltage

RMS Voltage

DC Blocking Voltage

100

V

IF(AV)

Average Rectified Forward Current Top device

Per leg

60

30

A

IFSM

Nonrepetitive Peak Surge Current

(8.3ms single half sine-wave superimposed on

rated load conditions)

350

A

IRRM

Peak Repetitive Reverse Current

per leg at tp = 2µs, 1KHz

1.0

mA

TJ

Junction Temperature

-65~175

℃

Tstg

Storage Temperature Range

-65~175

℃

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