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2N5202 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5202 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2N5202 DESCRIPTION · Collector-emitter sustaining voltage VCEO(SUS)= 90V(Min) · High saturation voltage · Wide area of safe operation APPLICATIONS · Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, and inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.0 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO(SUS) Collector-Emitter Voltage 50 V VCER(SUS) Collector-Emitter Voltage RBE= 50Ω 75 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 5 A IB Base Current-Continuous 2 A PD Total Power Dissipation@TC=25℃ 35 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~235 ℃ |
Podobny numer części - 2N5202 |
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Podobny opis - 2N5202 |
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