GMS77C1001 datasheet(13/44 Pages) HYNIX

13 / 44 page

GMS77C1000/GMS77C1001

July. 2001 Ver. 1.1

7.3 DC Characteristics (1)

• (TA=-40°

°°°C~+85°°°°C)

Parameter

Symbol

Test Condition

Specification

Unit

Min

Typ1

Data in “Typ” column is at 25

°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Max

Supply Voltage

VDD

XT, RC, LF

2.5

5.5

4.5

5.5

VDD start voltage to ensure

Power-On Reset

VPOR

VSS

-V

VDD rise rate

SVDD2

This parameter is characterized but not tested.

0.05

V/mS

RAM Data Retention

Voltage

VDR

-1.5

Power Fail Detection

VPFD

Normal Level

Low Level

2.5

Supply Current

IDD3

The test conditions for all IDD measurements in NOP execution are:

XIN = external square wave; all I/O pins tristated, pulled to VSS, EC0 = VDD, RESET = VDD; WDT disabled/enabled as specified.

XT, RC4

Does not include current through Rext. The current through the resistor can be estimated by the formula; IR = VDD/2Rext (mA)

XIN = 4MHz, VDD = 5V

-1.8

3.3

XIN = 20MHz, VDD = 5V

-9.0

XIN = 32KHz, VDD = 3V, WDT Disabled

-17

Power Down Current

IPD5

Power down current is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS as

like measurement conditions of supply current.

VDD = 3V, WDT Enabled

-10

VDD = 3V, WDT Disabled

-0.25

GMS77C1001 Arkusz danych(PDF) 13 Page - Hynix Semiconductor

GMS77C1001 Arkusz danych(HTML) 13 Page - Hynix Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44

Arkusz danych Pobierz

Link URL