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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ACE4562M Arkusz danych(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE4562M Arkusz danych(HTML) 3 Page - ACE Technology Co., LTD. |
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3 / 9 page  ACE4562M N & P-Channel 60-V (D-S) MOSFET VER 1.1 3 Parameter Symbol Conditions Min. Typ. Max. Unit Dynamic b Total Gate Charge Qg N-Channel VDS=30V, VGS=4.5V, ID=6A 8.9 nC Gate-Source Charge Qgs 2.5 Gate-Drain Charge Qgd 3.7 Turn-On Delay Time td(on) N-Channel VDS=30V, RL=5Ω ID=6A ,VGEN=10V RGEN=6Ω 5 ns Rise Time tf 6 Turn-Off Delay Time td(off) 31 Fall Time tf 9 Input Capacitance Ciss N-Channel VDS=15V, VGS=0V f=1MHz 1422 pF Output Capacitance Coss 84 Reverse Transfer Capacitance Crss 79 Total Gate Charge Qg P-Channel VDS=-30V, VGS=-4.5V, ID=-3.3A 18 nC Gate-Source Charge Qgs 7.5 Gate-Drain Charge Qgd 5.6 Turn-On Delay Time td(on) P-Channel VDS=-30V ,RL=9.1Ω ID=-3.3A ,VGEN=-10V RGEN=6Ω, 12 ns Rise Time tf 9 Turn-Off Delay Time td(off) 69 Fall Time tf 25 Input Capacitance Ciss P-Channel VDS=-15V, VGS=0V f=1MHz 2057 pF Output Capacitance Coss 151 Reverse Transfer Capacitance Crss 92 |
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