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3DF1A Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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3DF1A Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 3DF1A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVCBO Collector-Base Sustaining Voltage IC= 1mA; IE= 0 80 V BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 50 V BVEBO Emitter-Base Sustaining Voltage IE= 0.5mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.75A; IB= 0.075A 0.8 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.2 mA hFE DC Current Gain IC= 0.75A; VCE= 10V 15 |
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