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Zakładka z wyszukiwarką danych komponentów |
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3DF1C Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3DF1C Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 3DF1C DESCRIPTION · With TO-66 packaging · Large collector current · Low collector saturation voltage · High power dissipation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in DC-DC converter · Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A PD Total Power Dissipation@TC=75℃ 10 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ |
Podobny numer części - 3DF1C |
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Podobny opis - 3DF1C |
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