IXBH2N250 datasheet(1/5 Pages) IXYS

Numer części	IXBH2N250

Szczegółowy opis	Monolithic Bipolar MOS Transistor

PDF	5 Pages

Scroll/Zoom	100%

Producent	IXYS [IXYS Corporation]

Strona internetowa	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

CES

T

C = 25°C to 150°C

2500

V

CGR

T

J = 25°C to 150°C, RGE = 1M

2500

V

GES

Continuous

± 20

V

GEM

Transient

± 30

V

I

C25

T

C = 25°C

5

A

I

C110

T

C = 110°C

2

A

I

CM

T

C = 25°C, 1ms

13

A

SSOA

V

GE = 15V, TVJ = 125°C, RG = 47

I

CM = 6

A

(RBSOA)

Clamped Inductive Load

V

CE  2000

V

P

C

T

C = 25°C

32

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

M

d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in

Weight

TO-247

6

g

TO-268

4

g

DS100160A(8/17)

IXBH2N250

IXBT2N250

G = Gate

C

= Collector

E = Emitter

Tab = Collector

V

CES

= 2500V

I

C110

= 2A

V

CE(sat) 

 3.80V

High Voltage, High Gain

BIMOSFETTM

Monolithic Bipolar MOS

Transistor

Features

 High Blocking Voltage

 Integrated Anti-parallel Diode

 International Standard Packages

 Low Conduction Losses

Advantages

 Low Gate Drive Requirement

 High Power Density

Applications

 Switched-Mode and Resonant-Mode

Power Supplies

 Uninterruptible Power Supplies (UPS)

 Laser Generator

 Capacitor Discharge Circuit

 AC Switches

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

CES

I

C

= 250μA, V

CE = VGE

2500

V

GE(th)

I

C

= 250μA, V

CE = VGE

3.0

5.5

V

I

CES

V

CE = 0.8 • VCES, VGE = 0V

10

A

T

J = 125C

100

μA

I

GES

V

CE = 0V, VGE = 20V

100 nA

V

CE(sat)

I

C

= 2A, V

GE = 15V, Note 1

3.15

3.80

V

T

J = 125C

4.08

V

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXBH)

G

E

C (Tab)

C

TO-268 (IXBT)

E

G

C (Tab)

Preliminary Technical Information

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IXBH2N250 Arkusz danych(PDF) 1 Page - IXYS Corporation

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