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TMUX1119DBVR Arkusz danych(PDF) 22 Page - Texas Instruments |
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TMUX1119DBVR Arkusz danych(HTML) 22 Page - Texas Instruments |
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22 / 32 page ![]() S D CGDP CGDN CGSN CGSP OFF ON OFF ON Temperature (qC) -40 -20 0 20 40 60 80 100 120 -3 -2 -1 0 1 2 3 I(ON) IS(OFF) D008 22 TMUX1119 SCDS401 – DECEMBER 2018 www.ti.com Product Folder Links: TMUX1119 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Feature Description (continued) 8.2.5 Ultra-low Leakage Current The TMUX1119 provides extremely low on-leakage and off-leakage currents. The TMUX1119 is capable of switching signals from high source-impedance inputs into a high input-impedance op amp with minimal offset error because of the ultra-low leakage currents. Figure 26 shows typical leakage currents of the TMUX1119 versus temperature. Figure 26. Leakage Current vs Temperature 8.2.6 Ultra-low Charge Injection The TMUX1119 has a transmission gate topology, as shown in Figure 27. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed. Figure 27. Transmission Gate Topology |
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