IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN64N50P

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

DS

= 20 V; I

40

60

S

C

iss

7000

pF

C

oss

V

GS

= 0 V, V

800

pF

C

rss

100

pF

t

d(on)

30

n s

t

r

V

GS

= 10 V, V

25

n s

t

d(off)

R

G

= 2

Ω (External)

85

n s

t

f

22

n s

Q

g(on)

200

nC

Q

gs

V

GS

= 10 V, V

45

nC

Q

gd

120

nC

R

thJC

0.18 K/W

R

thCK

SOT-227B

0.05

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

64

A

I

SM

Repetitive

150

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

250

ns

Q

RM

V

0.6

µC

SOT-227B Outline