DA6279D8.001

26 September 2017

4 (12)

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Note

Crystal Frequency Range

10.00

64.00

MHz

1)

Output Frequency Range

5.00

64.00

MHz

1)

Voltage Control Range

VC

0

1.65

V

2)

Voltage Control Sensitivity

5

ppm/V

3)

Voltage Control Linearity

±10

%

4)

Frequency vs. Supply Voltage,

Clipped Sinewave Output

±0.1

ppm

5)

Frequency vs. Supply Voltage,

CMOS Output

±0.1

ppm

5)

Frequency vs. Load Change

±0.1

ppm

6)

Output Voltage (10

kΩ || 10 pF)

0.8

1.0

Vpp

7)

Output Voltage (15 pF)

Vpp

8)

Output Voltage Levels

8)

0

8)

Rise and Fall Time

3

ns

8)

Duty Cycle

40

50

60

%

Supply Current, Clipped

Sinewave Output

10 MHz

26 MHz

40 MHz

52.5 MHz

0.9

1.3

2.0

2.5

2.7

2.8

mA

Supply Current, CMOS Output

10 MHz

26 MHz

40 MHz

52.5 MHz

1.6

1.8

2.8

4.1

6.3

3.6

mA

Compensated Frequency

Stability Over Temperature

±0.28

±0.14

±0.10

ppm

9)

Compensation Range Linear

Part

-0.6

-0.37

-0.1

ppm/K

Compensation Range Inflection

Point

INF

20

28

36

Compensation Range Cubic

Part

105

Amplitude Start up Time

2

ms

Tri State Output Control Input

Output OFF State (High-Z)

Output ON State

DA pin voltage

DA LOW

DA HIGH

0

0.55

V

Note 1: Frequency division by two is selected by EEPROM bit DIV: 0=no division, 1=div by 2. Thus output frequency range is 5-64 MHz.

Note 2: If VC is not needed, it should be left unconnected (floating) and TCXO bit set TCXO=1.

Note 3: Depending on a crystal pulling

Note 5: With divider

Note 6: Clipped sinewave output:

10 kΩ || 10 pF ± 10%. CMOS output: 15 pF ± 10%

Note 7: Clipped sinewave output only

Note 8: CMOS output only

Note 9: With proper crystals