2SC4811 datasheet(2/6 Pages) NEC

Numer części	2SC4811

Szczegółowy opis	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

PDF	6 Pages

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Producent	NEC [NEC]

Strona internetowa	http://www.nec.com/

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Data Sheet D15602EJ2V0DS

2SC4811

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 100 V, IE = 0

1.0

µA

Emitter cutoff current

IEBO

VEB = 5 V, IC = 0

5.0

DC current gain

hFE1*VCE = 2.0 V, IC = 4.0 A

2,000

20,000

DC current gain

hFE2*VCE = 2.0 V, IC = 8.0 A

500

Collector saturation voltage

VCE(sat)*IC = 4.0 A, IB = 4.0 mA

1.5

Base saturation voltage

VBE(sat)*IC = 4.0 A, IB = 4.0 mA

2.0

Turn-on time

ton

0.5

µs

Storage time

tstg

2.5

µs

Fall time

IC = 4.0 A, IB1 =

−IB2 = 4.0 mA

RL = 12.5

Ω, VCC ≅ 50 V

Refer to the test circuit.

0.6

µs

Collector capacitance

Cob

VCB = 10 V, IE = 0 , f = 1 MHz

* Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE1

2,000 to 5,000

4,000 to 10,000

8,000 to 20,000

PACKAGE DRAWING (UNIT: mm)

TAPING SPECIFICATION

Electrode Connection

1. Base

2. Collector

3. Emitter

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