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MSN03R034S Arkusz danych(PDF) 4 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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MSN03R034S Arkusz danych(HTML) 4 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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4 / 6 page ![]() Typical Characteristics (Continued) 1.8 100 1.6 1 1.2 1.4 ※Notes: 1V 10V 20 40 60 80 ※Notes: ID=24A Tj=25 ℃ Figure 7. On-Resistance Variation with Gate to Source Voltage Figure 8. On-Resistance Variation vs Temperature 0.8 0 -50 TJ, Junction Temperature(℃) -25 150 25 75 100 50 125 1.VGS=10V 2. ID=20A 4 2 VGS, Gate to Source Voltage(V) 3 10 5 78 20 69 120 103 60 40 80 100 120 101 102 10 Operation in This Area Is limited by RDS(ON) DC 1S 100mS 10mS 10S 100uS Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 0 50 25 TC,Case Temperature(℃) 150 75 100 125 20 10-1 VDS,Drain-Source Voltage(V) 100 10-1 100 101 102 Single Pulse TJ=Max rated TC=25 ℃ p Maple Semiconductor CO., LTD http://www.meipusen.com Rev. 00 Jan . 2019 |
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