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FIR4525DG Arkusz danych(PDF) 3 Page - Shenzhen Foster Semiconductor Co., Ltd.

Numer części FIR4525DG
Szczegółowy opis  N and P-Channel Enhancement Mode Power MOSFET
PDF  9 Pages
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Producent  FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]
Strona internetowa  http://www.first-semi.com
Logo FOSTER - Shenzhen Foster Semiconductor Co., Ltd.

FIR4525DG Arkusz danych(HTML) 3 Page - Shenzhen Foster Semiconductor Co., Ltd.

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Apr,
Apr,
Apr,
Apr, 2012-Ver4.5
2012-Ver4.5
2012-Ver4.5
2012-Ver4.5
0
0
0
02
2
2
2
FIR4525DG
P-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-40
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-40V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
-
-
±10
μA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.0
-1.5
-2.0
V
VGS=-10V, ID=-5A
-
32
38
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-4A
-
39
50
mΩ
Forward Transconductance
gFS
VDS=-5V,ID=-5A
10
-
-
S
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
-
948
-
PF
Output Capacitance
Coss
-
98
-
PF
Reverse Transfer Capacitance
Crss
VDS=-20V,VGS=0V,
F=1.0MHz
-
72
-
PF
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
-
6.2
-
nS
Turn-on Rise Time
tr
-
8.4
-
nS
Turn-Off Delay Time
td(off)
-
44.8
-
nS
Turn-Off Fall Time
tf
VDD=-20V, RL=2.3Ω
VGS=-10V,RGEN=6Ω
-
16
-
nS
Total Gate Charge
Qg
-
18
-
nC
Gate-Source Charge
Qgs
-
3.4
-
nC
Gate-Drain Charge
Qgd
VDS=-20V,ID=-5A
VGS=-10V
-
3.2
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=-5A
-
-
-1.2
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .
%
4.
Guaranteed by design, not subject to production
www.First-semi.com
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