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HERF1001G Arkusz danych(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

Numer części HERF1001G
Szczegółowy opis  10Ampere Insulated Dual Common Cathode High Efficiency Rectifiers
PDF  2 Pages
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Producent  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Strona internetowa  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

HERF1001G Arkusz danych(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

  HERF1001G_19 Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. HERF1001G_19 Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd.  
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Features
Low forward voltage drop
Fast switching for high efficiency
High current capability
Case: TO-220F fully plastic isolated encapsulation
High surge current capability
Weight: 1.9 gram approximately
Polarity: As marked on diode body
method 208
Mounting position: Any
Terminals: Solderable per MIL-STD-202
Mechanical Data
Low reverse leakage current
Epoxy: UL 94V-0 rate flame retardant
ITO-220AB/TO-220F-3L
Unit : inch (mm)
HERF1001G thru HERF1008G
Pb Free Plating Product
HERF1001G thru HERF1008G
10Ampere Insulated Dual Common Cathode High Efficiency Rectifiers
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 1/2
Application
Pb
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Rev.09T
Positive
Negative
Common Cathode
Case
Case
Case
Common Anode
Suffix "G"
Case
Series
Tandem Polarity
Suffix "GA"
Suffix "GS"
Doubler
Tandem Polarity
Suffix "GD"
VRRM
50
100
200
300
400
600
800
1000
V
VRMS
35
70
140
210
280
420
560
700
V
VDC
50
100
200
300
400
600
800
1000
V
IF(AV)
A
trr
ns
CJ
pF
RθJC
°C/W
TJ
°C
TSTG
°C
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
60
40
1.0
1.3
1.7
Maximum reverse recovery time (Note 2)
50
80
Operating junction temperature range
- 55 to +150
Storage temperature range
- 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A
TJ=125°C
400
Typical junction capacitance (Note 3)
Typical thermal resistance
3.0
A
Maximum instantaneous forward voltage (Note 1)
@ 5 A
VF
V
Maximum reverse current @ rated VR
TJ=25°C
IR
10
μA
Maximum DC blocking voltage
Maximum average forward rectified current
10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
125
HERF
1006G
HERF
1008G
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
HERF
1007G
PARAMETER
SYMBOL
HERF
1001G
HERF
1002G
HERF
1003G
HERF
1004G
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
HERF
1005G
.189(4.8)
.406(10.3)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.035(0.9)
.011(0.3)
(2.55)
(2.55)
.1
.1
.032(.8)
.134(3.4)
.165(4.2)
.381(9.7)
.114(2.9)
.098(2.5)
.055(1.4)
.039(1.0)
MAX
.118(3.0)


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