WNM3003 datasheet(2/7 Pages) WILLSEMI

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WNM3003

Absolute Maximum ratings

Parameter

Symbol

10 S

Steady State

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

±20

TA=25°C

4.0

3.7

Continuous Drain Current

TA=70°C

3.2

3.0

TA=25°C

0.8

0.7

Maximum Power Dissipation

TA=70°C

0.5

0.4

TA=25°C

3.7

3.4

Continuous Drain Current

TA=70°C

2.9

2.7

TA=25°C

0.7

0.6

Maximum Power Dissipation

TA=70°C

0.4

0.3

Pulsed Drain Current

IDM

Operating Junction Temperature

150

°C

Lead Temperature

260

°C

Storage Temperature Range

Tstg

-55 to 150

°C

Thermal resistance ratings

Parameter

Symbol

Typical

Maximum

Unit

10 s

120

145

Junction-to-Ambient Thermal Resistance

Steady State

R JA

132

168

10 s

145

174

Junction-to-Ambient Thermal Resistance

Steady State

R JA

158

202

Junction-to-Case Thermal Resistance

Steady State

R JC

°C/W

Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper

Surface mounted on FR4 board using minimum pad size, 1oz copper

Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%

Repetitive rating, pulse width limited by junction temperature TJ=150°C.

Will Semiconductor Ltd.

2011 - Rev.1.1

Dec,

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