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74HC03 Arkusz danych(PDF) 4 Page - Silicon Supplies

Numer części 74HC03
Szczegółowy opis  High Speed CMOS Logic
PDF  5 Pages
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Producent  SS [Silicon Supplies]
Strona internetowa  https://siliconsupplies.com/
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74HC03 Arkusz danych(HTML) 4 Page - Silicon Supplies

  74HC03 Datasheet HTML 1Page - Silicon Supplies 74HC03 Datasheet HTML 2Page - Silicon Supplies 74HC03 Datasheet HTML 3Page - Silicon Supplies 74HC03 Datasheet HTML 4Page - Silicon Supplies 74HC03 Datasheet HTML 5Page - Silicon Supplies  
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High Speed CMOS Logic – 74HC03
 
 
DC Electrical Characteristics (Voltages Referenced to GND)
Rev 1.0
16/04/18
LIMITS
PARAMETER
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
SYMBOL
VCC
CONDITIONS
UNITS
25°C
85°C
FULL RANGE
4
2.0V
0.1
0.1
0.1
4.5V
0.1
0.1
0.1
VIN = VIH
│IOUT│≤ 20µA
6.0V
0.1
0.1
0.1
4.5V
VIN = VIH
│IOUT│≤ 4.0mA
0.26
0.33
0.33
Maximum Low-Level
Output Voltage
VOL
V
6.0V
VIN = VIH
│IOUT│≤ 5.2mA
0.26
0.33
0.33
Maximum Input
Leakage Current
IIN
6.0V
VIN = VCC or GND
±0.1
±1.0
±1.0
µA
Maximum 3-State
leakage current
IOZ
6.0V
VOUT=VCC or GND
VIN = VIL or VIH
±0.5
±5.0
±5.0
µA
Maximum Quiescent
Supply Leakage
Current
ICC
6.0V
VIN = VCC or GND
IOUT = 0µA
1
10
10
µA
AC Electrical Characteristics5
LIMITS
PARAMETER
SYMBOL
VCC
CONDITIONS
UNITS
25°C
85°C
FULL RANGE
4
2.0V
120
150
150
4.5V
24
30
30
Maximum
Propagation Delay,
CL = 50pF,
A or B to Y
(Figures 2,4)
tPLZ, tPZL
ns
tr = tf = 6ns
6.0V
20
26
26
2.0V
75
95
95
4.5V
15
19
19
Maximum
Output Transition Time,
CL = 50pF,
any Output
(Figures 2,4)
tTHL
ns
tr = tf = 6ns
6.0V
13
16
16
Maximum Input
Capacitance
CIN
-
-
10
10
10
pF
Maximum Three-State
Output Capacitance
(Output in High-
Impedance State)
COUT
-
-
10
10
10
pF
TYPICAL
Power Dissipation
TA = 25°C,
pF
Capacitance
(Per Gate)
6
CPD
-
VCC = 5.0V
8
 
5. Not production tested in die form, characterized by chip design and tested in package LAT.
6. Used to determine the no-load dynamic power consumption: PD = CPD VCC
2f + ICC VCC.
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