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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01 — 3 June 2005

3 of 8

Philips Semiconductors

PDTC323TK

NPN 500 mA resistor-equipped transistor; R1 = 2.2 k

Ω, R2 = open

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

Table 6:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1] -

-

500

K/W

Table 7:

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

collector-base cut-off

current

-

-

100

nA

collector-emitter

cut-off current

-

-

0.5

µA

emitter-base cut-off

current

-

-

100

nA

DC current gain

100

300

-

collector-emitter

saturation voltage

-

25

80

V

R1

bias resistor 1 (input)

1.54

2.2

2.86

k

Ω

collector capacitance

f = 1 MHz

-7

-

pF