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DAM7P60D Arkusz danych(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

Numer części DAM7P60D
Szczegółowy opis  P-Channel Enhancement Mode MOSFET
PDF  4 Pages
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Producent  DACO [DACO SEMICONDUCTOR CO.,LTD.]
Strona internetowa  http://www.dacosemi.com/
Logo DACO - DACO SEMICONDUCTOR CO.,LTD.

DAM7P60D Arkusz danych(HTML) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

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Electrical Characteristics @ TJ =25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V
IDS=-250uA
-60
-
-
V
Zero Gate Voltage Drain Current
IDSS
VGS=0V
VDS=-60V
-
-
-1
uA
Gate-Body Leakage
IGSS
VGS=±20V
VDS=0V
-
-
±100
nA
ON Characteristics
Gate Threshold Voltage
VTH
VDS=VGS
IDS=-250uA
-1.2
-1.6
-2.5
V
Static Drain-Source On-Resistance
RDS(on)
VGS=-10V
IDS=-3A
-
153
180
Dynamic Characteristics
Input Capacitance
Ciss
VDS=-30V
VGS=0V
Freq.=1MHz
-
425
615
pF
Output Capacitance
Coss
-
35
50
Reverse Transfer Capacitance
Crss
-
20
30
Switching Characteristics
Turn-On Delay Time
Td(on)
VDD=-30V
VGS=-10V
RG =
IDS=-1A
-
5.2
10
ns
Rise Time
Tr
-
19
36
Turn-Off Delay Time
Td(off)
-
35
67
Fall Time
Tf
-
10.6
20
Total Gate Charge
Qg
VDS=-30V
VGS=-10V
IDS=-3A
-
8.2
12
nC
Gate to Source Charge
Qgs
-
1.8
3.6
Gate to Drain Charge
Qgd
-
1.5
3
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V
IS=-1A
-
-
-1
V
Notes:
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
2. VDD=-25V,VGS=-10V,L=1mH,IAS=-8A.,RG=
25Ω, Starting TJ=25°C
3. R
R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
R JC is guaranteed by design while R
R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
Aug.2017
DAM7P60D



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