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54HC08 Arkusz danych(PDF) 1 Page - Silicon Supplies

Numer części 54HC08
Szczegółowy opis  High Speed CMOS Logic
PDF  5 Pages
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Producent  SS [Silicon Supplies]
Strona internetowa  https://siliconsupplies.com/
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54HC08 Arkusz danych(HTML) 1 Page - Silicon Supplies

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High Speed CMOS Logic – 54HC08
Quad 2-Input AND Gate in bare die form
Output Drive Capability: 10 LSTTL Loads
Low Input Current: 1µA
Outputs directly interface CMOS, NMOS and TTL
Operating Voltage Range: 2V to 6V
Function compatible with 54LS08
High Noise Immunity CMOS process
Full Military Temperature Range.
Rev 1.0
07/02/19
Features:
Ordering Information
The following part suffixes apply:
No suffix - MIL-STD-883 /2010B Visual Inspection
“H” - MIL-STD-883 /2010B Visual Inspection
+ MIL-PRF-38534 Class H LAT
“K” - MIL-STD-883 /2010A Visual Inspection (Space)
+ MIL-PRF-38534 Class K LAT
LAT = Lot Acceptance Test.
For further information on LAT process flows see below.
www.siliconsupplies.com\quality\bare-die-lot-qualification
Supply Formats:
Mechanical Specification
Default – Die in Waffle Pack (400 per tray capacity)
Sawn Wafer on Tape – On request
Unsawn Wafer – On request
Die Thickness <> 350µm(14 Mils) – On request
Assembled into Ceramic Package – On request
Description
Die Dimensions in µm (mils)
The 54HC08 quad 2-input AND gate is fabricated using
a 2.5µm 5V CMOS process combining high speed
LSTTL performance with CMOS low power. The device
consists of four independent 2-input AND gates with
standard push-pull outputs and performs the Boolean
function Y = A B or Y = A + B. Device inputs are
compatible with standard CMOS outputs; with pull-up
resistors, they are compatible with LSTTL outputs. All
inputs are protected against ESD and excess voltage
transients. The die size is significantly smaller than
industry peers due to its re-design and production using
a more advanced CMOS process.
1200 (47)
Die Size (Unsawn)
1200 x 1350
47 x 53
µm
mils
Minimum Bond Pad Size
85 x 85
3.35 x 3.35
µm
mils
Die Thickness
350 (±20)
13.78 (±0.79)
µm
mils
Top Metal Composition
Al 1%Si 1.1µm
Back Metal Composition
N/A – Bare Si


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